- /* Paged mode memory programming */
- for (uint16_t CurrentByte = 0; CurrentByte < Write_Memory_Params.BytesToWrite; CurrentByte++)
- {
- bool IsOddByte = (CurrentByte & 0x01);
- uint8_t ByteToWrite = *(NextWriteByte++);
-
- ISPTarget_SendByte(Write_Memory_Params.ProgrammingCommands[0]);
- ISPTarget_SendByte(CurrentAddress >> 8);
- ISPTarget_SendByte(CurrentAddress & 0xFF);
- ISPTarget_SendByte(ByteToWrite);
-
- /* AVR FLASH addressing requires us to modify the write command based on if we are writing a high
- * or low byte at the current word address */
- if (V2Command == CMD_PROGRAM_FLASH_ISP)
- Write_Memory_Params.ProgrammingCommands[0] ^= READ_WRITE_HIGH_BYTE_MASK;
-
- /* Check to see the write completion method, to see if we have a valid polling address */
- if (!(PollAddress) && (ByteToWrite != PollValue))
- {
- if (IsOddByte && (V2Command == CMD_PROGRAM_FLASH_ISP))
- Write_Memory_Params.ProgrammingCommands[2] |= READ_WRITE_HIGH_BYTE_MASK;
-
- PollAddress = (CurrentAddress & 0xFFFF);
- }
-
- /* EEPROM increments the address on each byte, flash needs to increment on each word */
- if (IsOddByte || (V2Command == CMD_PROGRAM_EEPROM_ISP))
- CurrentAddress++;
- }
-
- /* If the current page must be committed, send the PROGRAM PAGE command to the target */
- if (Write_Memory_Params.ProgrammingMode & PROG_MODE_COMMIT_PAGE_MASK)
+ ISPTarget_SendByte(Write_Memory_Params.ProgrammingCommands[0]);
+ ISPTarget_SendByte(CurrentAddress >> 8);
+ ISPTarget_SendByte(CurrentAddress & 0xFF);
+ ISPTarget_SendByte(ByteToWrite);
+
+ /* AVR FLASH addressing requires us to modify the write command based on if we are writing a high
+ * or low byte at the current word address */
+ if (V2Command == CMD_PROGRAM_FLASH_ISP)
+ Write_Memory_Params.ProgrammingCommands[0] ^= READ_WRITE_HIGH_BYTE_MASK;
+
+ /* Check to see if we have a valid polling address */
+ if (!(PollAddress) && (ByteToWrite != PollValue))